Voltage-controlled three-terminal magnon transistor, and control and preparation method thereof
US12324357B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2023 |
| Grant date | Jun 3, 2025 |
| Priority date | — |
| Expiry date | Nov 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A voltage-controlled three-terminal magnon transistor is provided, including a ferroelectric layer, a magnetic layer, a generation terminal, a control terminal, a detection terminal, and a bottom electrode. After a current is inputted into the generation terminal, a magnon is generated in the magnetic layer. The detection terminal is made of a heavy metal material, which can convert the magnon in the magnetic layer into a charge flow. When a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, non-volatile polarization and non-volatile strain states of the ferroelectric layer change, which in turn affects a transmission capability of the magnon in the magnetic layer based on a magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer. In addition, a voltage signal of the detection terminal exhibits a regular loop change behavior with a change of the voltage pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.