Semiconductor device having a high breakdown voltage capacitor and method for forming the same
US12327692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Nov 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, the substrate includes a capacitor region and a metal wiring region. The capacitor region includes a lower electrode formed on the substrate, an interlayer insulating layer formed on the lower electrode, a dielectric layer pattern formed on the interlayer insulating layer, and an upper electrode formed on the dielectric layer pattern. The metal wiring region includes a lower metal wiring formed parallel to the lower electrode, the interlayer insulating layer formed on the lower metal wiring, an upper insulating layer formed on the interlayer insulating layer and having a thickness smaller than a thickness of the interlayer insulating layer, and an upper metal wiring formed on the upper insulating layer, and formed in parallel with the upper electrode. The upper insulating layer and the dielectric layer pattern are formed of different materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.