Patent · US Active

Semiconductor device

US12327808B2 · kind B2 · utility

0Cited by
0References
8Claims
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Assignee

Inventors

Key dates

Filing dateJul 27, 2022
Grant dateJun 10, 2025
Priority date
Expiry dateSep 29, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3512
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provide is a highly reliable semiconductor device in which stress generated in a semiconductor chip is reduced and an increase in thermal resistance is suppressed. The semiconductor device includes: a semiconductor chip including a first main electrode on one surface thereof and a second main electrode and a gate electrode on the other surface thereof; a first electrode connected to the one surface of the semiconductor chip via a first bonding material; and a second electrode connected to the other surface of the semiconductor chip via a second bonding material. The first electrode is a plate-shaped electrode and has a groove in a region overlapping with the semiconductor chip. The groove penetrates in a thickness direction of the first electrode and reaches an end portion of the first electrode when viewed in a plan view.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.