Semiconductor light source with a mirror coating and method
US12327978B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Feb 9, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In an embodiment a semiconductor light source includes an optoelectronic semiconductor chip configured to emit radiation and a cover body arranged on the optoelectronic semiconductor chip, wherein the cover body comprises a light-transmissive base body, wherein the light-transmissive base body comprises a plurality of recesses with inclined side faces, the recesses start at an emission side of the light-transmissive base body remote from the optoelectronic semiconductor chip and narrow towards the optoelectronic semiconductor chip, wherein a mirror coating is provided at top regions of the recesses next to the emission side, and wherein bottom regions of the recesses closest to the optoelectronic semiconductor chip are free of the mirror coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.