Light detector
US12328518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2023 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Dec 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A light detector is configured such that a light receiving portion having APDs and a peripheral portion are provided on a first principal surface of a p-type semiconductor substrate, and further includes a back electrode provided on a second principal surface of the semiconductor substrate and a p-type first separation portion provided between the light receiving portion and the peripheral portion. The APD has, on a first principal surface side, an n-type region and a p-epitaxial layer contacting the n-type region in a Z-direction. The peripheral portion has an n-type MISFET provided at a p-well and an n-well provided to surround entire side and bottom portions of the p-well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.