Semiconductor device, manufacturing method therefor, and electronic equipment
US12328861B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2024 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 26, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, manufacturing method therefor, and electronic equipment are provided. The manufacturing method includes: alternately depositing sacrificial layers and insulation layers to obtain a stacked structure; forming in the stacked structure a plurality of via holes distributed at intervals, and forming dummy word lines in the via holes; forming a first trench penetrating through the stacked structure every two via holes apart; forming a plurality of grooves by re-etching the plurality of insulation layers within the first trench, wherein two grooves of each insulation layer in two first trenches respectively expose partial side walls of a dummy word line; forming conductive layers within the two grooves corresponding to each insulation layer, wherein a conductive layer within each groove surrounds two exposed dummy word lines; and disconnecting a conductive layer surrounding a dummy word line to form a first electrode and a second electrode of a transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.