Semiconductor device and method of fabricating the same
US12328865B2 · kind B2 · utility
0Cited by
8References
18Claims
0Family size
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Key dates
| Filing date | Jun 10, 2022 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Mar 4, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/34
Abstract
Disclosed is a semiconductor device comprising a substrate, a contact structure that penetrates the substrate, a bottom electrode on the substrate and connected to the contact structure, a dielectric layer that covers the bottom electrode, and a top electrode on the bottom electrode. The dielectric layer separates the top electrode from the bottom electrode. The contact structure includes a lower conductive pattern and an upper conductive pattern on the lower conductive pattern. The upper conductive pattern includes a nitride of a first metal implanted with a dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.