Polycrystalline semiconductor resistor
US12328883B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2022 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jul 21, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor die includes a polycrystalline semiconductor resistor structure (poly resistor structure). The poly resistor structure includes a resistive path between a first terminal and a second terminal. The poly resistor structure includes a first region having a net first conductivity type dopant concentration located in the resistance path and a second region having a net second conductivity type dopant concentration located in the resistance path. A silicide structure is located on both a first portion of the first region and a first portion of the second region to electrically connect the first portion of the first region and the first portion of the second region. In some embodiments, poly resistor structures with different conductivity type regions can be connected together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.