Semiconductor device, power module and manufacturing method for the semiconductor device
US12328884B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 17, 2023 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L25/074
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming a trench on a first main surface of a conductive semiconductor substrate. The method includes laminating conductive layers, each of which is a first or a second conductive layer, along a surface normal direction of a side surface of the trench, while forming dielectric layers between a conductive layer closest to the side surface of the trench and the side surface of the trench, and between the corresponding conductive layers; and removing the first conductive layer and the dielectric layer, which are formed on a bottom portion of the trench, to electrically connect the second conductive layer to the semiconductor substrate at the bottom portion of the trench. After a portion of the first main surface, the portion being outside of the trench, is covered with an insulating protective film, the first conductive layer and the dielectric layer are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.