Bidirectional conduction trench gate power MOS device and manufacturing method thereof
US12328901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2022 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Aug 20, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection. A device structure of the bidirectional conduction trench gate power MOS device has advantages compared with double-transistor series connection used in a conventional BMS and other structures for realizing a bidirectional conduction: firstly, the bidirectional conduction trench gate power MOS device needs to occupy half or less area compared with a conventional mode, improving a degree of integration; secondly, the device structure has a simple manufacturing process and a low manufacturing cost reducing manufacturing problems; thirdly, the drain electrode and the source electrode of the device structure are exchanged to realize a symmetrical structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.