Patent · US Active

Micron scale tin oxide-based semiconductor devices

US12328906B2 · kind B2 · utility

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7References
20Claims
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Inventor

Key dates

Filing dateJan 4, 2022
Grant dateJun 10, 2025
Priority date—
Expiry dateApr 11, 2043

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC04B2235/3293
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.