Thin-film transistor, manufacturing method thereof, array substrate and display panel
US12328910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2021 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Sep 14, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The disclosure provides a thin-film transistor, a manufacturing method thereof, an array substrate and a display panel, and belongs to the technical field of thin-film transistor devices. The thin-film transistor includes a base substrate, an active layer on the base substrate including a plurality of semiconductor nanowires, and a plurality of guiding projections on the base substrate which extend along a first direction and are arranged at intervals and each of which includes two side walls extending along the first direction, and the semiconductor nanowire extends along a side wall of the guiding projection. In the thin-film transistor, since the semiconductor nanowires are used as the active layer, mobility and concentration of carriers in the thin-film transistor can be effectively increased and therefore performance of the thin-film transistor can be improved. A length of the semiconductor nanowire is not limited, and a size of the thin-film transistor is not limited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.