Vertical spintronic devices based on dislocations in single-crystalline semiconductors and methods for their production
US12328913B1 · kind B1 · utility
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11Claims
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Key dates
| Filing date | Jun 9, 2022 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 14, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor spintronic device is disclosed, which includes a substrate, a first ferromagnetic contact layer and a second ferromagnetic contact layer disposed on the substrate, and a semiconductor nanomembrane, disposed between the first ferromagnetic contact layer and the second ferromagnetic contact layer. The semiconductor spintronic device can include a screw dislocation throughout the thickness of the semiconductor nanomembrane layers. Methods of fabricating and operating a semiconductor spintronic device are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.