Substrate for optical device, method of manufacturing the same, optical device including the substrate for optical device, method of manufacturing the same, and electronic apparatus including optical device
US12328966B2 · kind B2 · utility
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6References
20Claims
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Key dates
| Filing date | May 2, 2022 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Jun 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/16
Abstract
Provided is a high-quality substrate including a silicon layer, a multilayer buffer layer on the silicon layer, and an indium phosphide (InP) layer on the multilayer buffer layer, wherein a crystal growth direction of the silicon layer is a direction inclined by 1° to 10° with respect to a vertical direction, and wherein the multilayer buffer layer includes a buffer layer in which a crystal growth direction is inclined with respect to the vertical direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.