Optoelectronic device manufacturing method

US12329017B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• François Templier · Grenoble, FR
• Roch Espiau De Lamaestre · Grenoble, FR
• Tony Maindron · Grenoble, FR

Key dates

• Filing date: Aug 16, 2022
• Grant date: Jun 10, 2025
• Expiry date: Dec 30, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/1201

Abstract

An optoelectronic device manufacturing method, including the following successive steps: transferring an active inorganic photosensitive diode stack on an integrated control circuit previously formed inside and on top of a semiconductor substrate; and forming a plurality of organic light-emitting diodes on the active photosensitive diode stack.