Method for manufacturing a layer of textured aluminum nitride
US12329032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2020 |
| Grant date | Jun 10, 2025 |
| Priority date | — |
| Expiry date | Dec 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for manufacturing a thin layer of textured AlN comprising the following successive steps: a) providing a substrate having an amorphous surface, b) forming a polycrystalline nucleation layer of MS2 with M=Mo, W or one of the alloys thereof, on the amorphous surface of the substrate, the polycrystalline nucleation layer consisting of crystalline domains the base planes of which are parallel to the amorphous surface of the substrate, the crystalline domains being oriented randomly in an (a, b) plane formed by the amorphous surface of the substrate, c) depositing aluminum nitride on the nucleation layer, leading to the formation of a thin layer of textured AlN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.