Composition and process for selectively etching a layer comprising an aluminium compound in the presence of layers of low-k materials, copper and/or cobalt

US12331239B2 · kind B2 · utility

Assignee

• BASF SE

Inventors

• Joannes Theodorus Valentinus Hoogboom · Ludwigshafen, DE
• Jhih Jheng Ke · Taoyuan, TW
• Che Wei Wang · Taoyuan, TW
• Andreas Klipp · Lambsheim, DE
• Yi-Ping Cheng · Taoyuan, TW

Key dates

• Filing date: Nov 27, 2023
• Grant date: Jun 17, 2025
• Expiry date: Nov 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

A composition for selectively etching a layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt, and a corresponding process, are described. Further described is a process for the manufacture of a semiconductor device, including the step of selectively etching at least one layer including an aluminum compound in the presence of a layer of a low-k material and/or a layer including copper and/or cobalt by contacting the at least one layer including an aluminum compound with the described composition.