Patent · US Active

Method and system for inspecting semiconductor wafer and method of fabricating semiconductor device using the same

US12332186B2 · kind B2 · utility

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15References
20Claims
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Key dates

Filing dateJun 9, 2022
Grant dateJun 17, 2025
Priority date
Expiry dateJul 28, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor wafer inspection method is provided. The semiconductor wafer inspection method includes: providing a wafer with target and reference dies; obtaining a candidate image of a first region of the target die and a reference image of a second region of the reference die; performing an imaging process on the candidate image to obtain a high resolution candidate image including sub-pixels for each pixel of the candidate image; performing the imaging process on the reference image to obtain a high resolution reference image including sub-pixels for each pixel of the candidate image; shifting the high resolution reference image in units of the sub-pixels; obtaining a difference image based on a difference between the high resolution candidate image and the high resolution reference image; and detecting whether a defect signal generated based on the difference image exceeds a threshold value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.