Patent · US Active

Systems and methods for single-photon emission

US12332405B2 · kind B2 · utility

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12Claims
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Key dates

Filing dateApr 5, 2022
Grant dateJun 17, 2025
Priority date
Expiry dateMay 19, 2043

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2207/101
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A photon emitter includes a multi-layer film. The multi-layer film includes a first material layer and a second material layer, and the multi-layer film includes an interface surface between the first and second material layers. The first material layer includes silicon nitride. The multi-layer film is formed by positioning the silicon nitride over the second material layer and energetically activating the combination of the first material layer and the second material layer. The interface surface is operable to emit single photons.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.