Pump discharge sequence improvements in external power supply mode for pulse recovery phases in non-volatile memory
US12334158B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Sep 27, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, apparatuses and methods may provide for technology that includes a charge pump and applies a program voltage from the charge pump to selected wordlines in the NAND memory. The technology may also conduct a discharge of the program voltage from the charge pump and maintain a connection between the selected wordlines and a pass voltage of the charge pump while the program voltage is being discharged. In one example, the connection between the selected wordlines and the pass voltage prevents the selected wordlines from floating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.