Manufacturing method of semiconductor device
US12334339B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 23, 2023 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Aug 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/304
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.