Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic device
US12334346B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2023 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Aug 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an electronic device based on SiC includes forming a structural layer of SiC on a front side of a substrate. The substrate has a back side that is opposite to the front side along a direction. Active regions of the electronic device are formed in the structure layer, and the active regions are configured to generate or conduct electric current during the use of the electronic device. A first electric terminal is formed on the structure layer, and an intermediate layer is formed at the back side of the substrate. The intermediate layer is heated by a LASER beam in order to generate local heating such as to favor the formation of an ohmic contact of Titanium compounds. A second electric terminal of the electronic device is formed on the intermediate layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.