Plasma etching method
US12334359B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jul 28, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jul 28, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a plasma etching method. The method includes a first step of vaporizing liquid heptafluoropropyl methyl ether (HFE-347mcc3) and liquid pentafluoropropanol (PFP); a second step of supplying a discharge gas containing the vaporized HFE-347mcc3, the vaporized PFP, and argon gas to a plasma chamber in which an etching target is disposed; and a third step of discharging the discharge gas to generate plasma and of plasma-etching the etching target using the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.