Lithographically defined vertical interconnect access (VIA) for a bridge die first level interconnect (FLI)
US12334447B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Jun 27, 2019 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Feb 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein relate to lithographically defined vertical interconnect accesses (litho-vias) for a bridge die first level interconnect (FLI) and techniques of fabricating such litho-vias. In one example, a package substrate comprises a bridge die embedded in the package substrate; a first contact pad outside a perimeter of the bridge die; a second contact pad inside the perimeter of the bridge die and coupled to the bridge die by a first via; a third pad inside the perimeter of the bridge die, adjacent to the second contact pad, and coupled to the bridge die by a second via. The first contact pad has a surface finish disposed thereon. A first protruded interconnect structure is positioned on the first via and a second protruded interconnect structure is positioned on the second via. Each of the first and second vias have sidewalls that are substantially vertical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.