Negative electrode material, negative electrode plate, electrochemical device, and electronic device
US12334559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Oct 26, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A negative electrode material includes a silicon-based material and a carbon material. Peaks with a shift range of 1255˜1355 cm−1 and 1575˜1600 cm−1 in a Raman spectrum of the carbon material are a D peak and a G peak respectively. Peaks with a shift range of 1255˜1355 cm−1 and 1575˜1600 cm−1 in a Raman spectrum of the silicon-based material are the D peak and the G peak respectively. A scattering peak intensity ratio of D versus G peaks of the carbon material is A, and a scattering peak intensity ratio of D versus G peaks of the silicon-based material is B. 0.15≤A≤0.9, 0.8≤B≤2.0, and 0.2<B−A<1.8.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.