Methods for forming a vertical cavity surface emitting laser device
US12334713B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Sep 7, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.