DrMOS, integrated circuit, electronic device, and preparation method
US12334913B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2023 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Feb 17, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A driver metal-oxide-semiconductor field-effect transistor DrMOS, an integrated circuit, an electronic device, and a preparation method are provided. The DrMOS mainly includes a first die and a second die. The first die includes a drive circuit and a first switching transistor, and the drive circuit is connected to a gate of the first switching transistor. The second die includes a second switching transistor, and the drive circuit is connected to a gate of the second switching transistor through a first conductor. The drive circuit and the first switching transistor are prepared in a same die. This helps to reduce an area, loss, and costs of the DrMOS. The first switching transistor and the second switching transistor are prepared in different dies that reduces type selection limitation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.