Patent · US Active

Method for manufacturing MEMS acoustic sensor

US12335702B2 · kind B2 · utility

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8Claims
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Key dates

Filing dateMay 24, 2023
Grant dateJun 17, 2025
Priority date
Expiry dateJan 30, 2044

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH04R2201/003
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

Provided is a method for manufacturing a MEMS acoustic sensor. A structural layer and a piezoelectric material layer are stacked on the substrate. Photolithography modeling is performed on the piezoelectric material layer and the structural layer. A polymer layer is stacked on the piezoelectric material layer. The substrate is etched to form a cavity. A first part of a jig is stacked on the polymer layer. The jig, the substrate, the piezoelectric material layer, and the polymer layer are heated. Air is introduced into the cavity and a pressure inside the cavity is controlled. An atmospheric pressure load of the air is maintained and the air is cooled. The pressure inside the cavity is stopped to be controlled and the pressure inside the cavity is reduced, the jig is disassembled, and a wafer is cut to obtain the MEMS acoustic sensor, to effectively improve the accuracy and reliability in processing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.