Dielectric layer on semiconductor device and method of forming the same

US12336211B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Cheng-I Lin · Cupertino, US
• Ming-Ho Lin · Taipei, TW
• Chun-Heng Chen · Hsinchu, TW
• Yung-Cheng Lu · Hsinchu, TW

Key dates

• Filing date: Aug 4, 2021
• Grant date: Jun 17, 2025
• Expiry date: Jul 8, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A method of forming a semiconductor device includes forming a first layer on a semiconductor fin; forming a mask on the first layer, the mask being thicker on a top of the semiconductor fin than along a sidewall of the semiconductor fin. The first layer is thinned along the sidewall of the semiconductor fin using the mask. A second layer is formed on the semiconductor fin, the second layer covering the mask and the first layer. A dummy gate layer is formed on the semiconductor fin and patterned to expose a top surface of the semiconductor fin.