Enhanced radio frequency switch and fabrication methods thereof

US12336218B2 · kind B2 · utility

Assignee

• Powerlite Semiconductor (Shanghai) Co., Ltd. · CN

Inventors

• Shuming Xu · Schnecksville, US
• Hang Fan · Shanghai, CN

Key dates

• Filing date: Nov 10, 2021
• Grant date: Jun 17, 2025
• Expiry date: Feb 26, 2044

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D88/101

Abstract

A radio frequency (RF) switch device includes a semiconductor substrate, doped with an impurity of a first conductivity type at a first doping concentration level, and a mesa extending vertically from an upper surface of the substrate and formed contiguous therewith. The mesa includes a drift region doped with the impurity of the first conductivity type at a second doping concentration level, the second doping concentration level being less than the first doping concentration level. The mesa forms a primary current conduction path in the RF switch device. The RF switch device further includes an insulator layer disposed on at least a portion of the upper surface of the substrate and sidewalls of the mesa, and at least one gate disposed on at least a portion of an upper surface of the insulator layer, the gate at least partially surrounding the mesa.