Thin film transistor and display device including the same
US12336223B2 · kind B2 · utility
0Cited by
9References
22Claims
0Family size
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Key dates
| Filing date | Apr 18, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jul 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor includes an active layer over a substrate, a gate electrode over the active layer, a gate line connected with the gate electrode, and a gate insulation film between the active layer and the gate electrode. The active layer includes a channel region overlapping the gate electrode, and a drain region and a source region on respective sides of the channel region. A length of a straight line connecting the drain region and the source region by a shortest distance may be greater than a width of the gate line parallel to the straight line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.