Manufacturing method of a nanowire-based structure and capacitor array component including the structure
US12336241B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 18, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Mar 29, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/13
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A nanowire structure is manufactured by forming islands of conductive material on a substrate, and a conductive sacrificial layer in the space between conductive islands. The conductive islands include an anodic etch barrier layer. An anodizable layer is formed, over the conductive islands and sacrificial layer, and anodized to form a porous template. Nanowires are formed in regions of the porous template that overlie the conductive islands. Removal of the porous template and sacrificial layer leaves a nanowire structure including isolated groups of nanowires connected to respective conductive islands which function as current collectors. Respective stacks of conductive and insulator layers are formed over different groups of the nanowires to form respective capacitors that are electrically isolated from one another. A monolithic component may thus be formed including an array of isolated capacitors formed over nanowires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.