Metal gate structures for field effect transistors
US12336265B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Jan 9, 2023 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Aug 8, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.