Semiconductor structure with selective bottom terminal contacting
US12336293B2 · kind B2 · utility
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2References
14Claims
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Key dates
| Filing date | Dec 23, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jul 19, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semi-conductor structure with selective bottom terminal contacting is described. The semiconductor device comprises a first metal layer disposed over a substrate; a conductive layer disposed over the first metal layer; and a second metal layer disposed over the conductive layer, the second metal layer embedding a porous structure comprising a plurality of pores that extend substantially perpendicularly from a top surface of the porous structure toward the conductive layer, wherein only a subset of the plurality of pores open onto the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.