Thin film transistor, method for fabricating the thin film transistor, thin film transistor array substrate, and method for fabricating the thin film transistor array substrate
US12336388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2022 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | Jul 15, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1201
Abstract
A method for fabricating a thin film transistor comprises disposing a semiconductor layer including a channel area, and a first and second electrode areas, disposing a gate insulating layer covering the semiconductor layer, disposing a diffusion barrier layer covering the gate insulating layer, disposing first and second electrode holes corresponding to the first and second electrode areas, and disposing a gate electrode overlapping the channel area, first and second electrodes electrically connected to the first and second electrode areas through the first and second electrode holes. The disposing of the first electrode hole, and the second electrode hole includes patterning the diffusion layer with a patterning mask disposed on the diffusion barrier layer. The disposing of the gate electrode and the first and second electrodes may include disposing a conductive material layer covering the diffusion barrier layer, and patterning the conductive material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.