Semiconductor devices and methods of fabricating the same
US12336437B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2021 |
| Grant date | Jun 17, 2025 |
| Priority date | — |
| Expiry date | May 27, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A semiconductor device includes a substrate including a first region and a second region, data storage patterns on the first region and spaced apart from each other in a first direction, an upper insulating layer on the first and second regions and on the data storage patterns, a cell line structure penetrating the upper insulating layer on the first region, extending in the first direction, and electrically connected to the data storage patterns, and an upper connection structure penetrating the upper insulating layer on the second region. The upper connection structure includes an upper conductive line, and upper conductive contacts arranged along a bottom surface of the upper conductive line. The bottom surface of the upper conductive line is located at a height higher than a bottom surface of the cell line structure. A side surface of the cell line structure has a straight line shape continuously-extended.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.