Method for producing a layer of aluminum nitride (ALN) on a structure of silicon or III-V materials
US12338545B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 25, 2021 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Feb 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing an aluminium nitride (AlN)-based layer on a structure with the basis of silicon (Si) or with the basis of a III-V material, may include several deposition cycles performed in a plasma reactor comprising a reaction chamber inside which is disposed a substrate having the structure. Each deposition cycle may include at least the following: deposition of aluminium-based species on an exposed surface of the structure, the deposition including at least one injection into the reaction chamber of an aluminium (Al)-based precursor; and nitridation of the exposed surface of the structure, the nitridation including at least one injection into the reaction chamber of a nitrogen (N)-based precursor and the formation in the reaction chamber of a nitrogen-based plasma. During the formation of the nitrogen-based plasma, a non-zero polarisation voltage Vbias_substrate may be applied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.