Method and system for liquid encapsulated growth of cadmium zinc telluride crystals
US12338549B1 · kind B1 · utility
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5References
18Claims
0Family size
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Key dates
| Filing date | Jun 27, 2023 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Jun 27, 2043 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system for growing a CdZnTe crystal includes a crucible operable to contain a solid CdZnTe source and a heating element operable to melt an upper surface to the solid CdZnTe source and form a tellurium rich melt floating on the solid CdZnTe source. The crucible is operable to contain an encapsulating layer above the tellurium rich melt. The system also includes a rod operable to mechanically support a CdZnTe seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.