Magnetoresistive element and semiconductor device
US12339334B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Oct 30, 2019 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Sep 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetoresistive element of the present disclosure includes a multilayer structure made up of at least a fixed magnetization layer, an intermediate layer and a storage layer. A first side wall is formed on a side wall of the multilayer structure. A second side wall is formed on the first side wall. The first side wall is made of an insulating material, for instance SiN or AlOx, that prevents intrusion of hydrogen. The second side wall is made of a hydrogen storage material, for instance titanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.