Double pinned MR multilayer film, full bridge MR sensor and manufacturing method therefor
US12339335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Apr 30, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R33/093
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A double pinned magnetoresistance (MR) multilayer film, a full bridge MR sensor using the double pinned MR multilayer film and a method for manufacturing the full bridge MR sensor are provided in the present invention. The double pinned MR multilayer film comprises: a buffer layer, a first antiferromagnetic layer, a first ferromagnetic layer, a first interlayer, a ferromagnetic reference layer, a spacer layer, a ferromagnetic free layer, a second interlayer, a second ferromagnetic layer, a second antiferromagnetic layer and a cover layer that are stacked in sequence. The first antiferromagnetic layer applies a first exchange bias to the first ferromagnetic layer, and the first ferromagnetic layer applies a first artificial antiferromagnetic coupling to the ferromagnetic reference layer through the first interlayer. The second antiferromagnetic layer applies a second exchange bias to the second ferromagnetic layer, and the second ferromagnetic layer applies a second artificial antiferromagnetic coupling to the ferromagnetic free layer through the second interlayer. The full bridge MR sensor can not only realize the full bridge function in a single chip, but also has small zero point…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.