Reflective mask blank for EUV lithography and substrate equipped with conductive film
US12339580B2 · kind B2 · utility
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Key dates
| Filing date | Nov 15, 2024 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Nov 15, 2044 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/24
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A reflective mask blank for EUV lithography, includes: a substrate; a conductive film disposed on or above a back surface of the substrate; a reflective layer disposed on or above a front surface of the substrate, the reflective layer reflecting EUV light; and an absorption layer disposed on or above the reflective layer, the absorption layer absorbing the EUV light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.