Ruthenium-based sputtering target and method for manufacturing same
US12340995B2 · kind B2 · utility
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Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Oct 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ruthenium-based sputtering target having a cast structure, in which a sputter surface of the sputtering target includes at least two or more types of regions, and crystal surfaces in the regions are different from each other, each of the crystal surfaces being specified by a main peak of X-ray diffraction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.