Method of manufacturing semiconductor devices and semiconductor devices
US12341055B2 · kind B2 · utility
0Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Sep 5, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first interlayer dielectric (ILD) layer disposed over a substrate, a control layer disposed over the first ILD layer and containing silicon and oxygen, and a resistor wire disposed over the control layer. An oxygen concentration of the control layer is greater than an oxygen concentration of the first ILD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.