Integrated circuit device with through-electrode and electrode landing pad, and semiconductor package including the same
US12341084B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 2021 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Jun 16, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06548
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first insulating layer on the first surface of the semiconductor substrate, an electrode landing pad positioned on the first surface of the semiconductor substrate and having a sidewall surrounded by the first insulating layer, a top surface apart from the first surface of the semiconductor substrate, and a bottom surface opposite to the top surface, and a through-electrode configured to penetrate through the semiconductor substrate and contact the top surface of the electrode landing pad, wherein a horizontal width of the top surface of the electrode landing pad is less than a horizontal width of the bottom surface of the electrode landing pad and greater than a horizontal width of a bottom surface of the through-electrode in contact with the top surface of the electrode landing pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.