Mandrel fin design for double seal ring
US12341113B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 6, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Aug 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes two circuit regions and two inner seal rings, each of which surrounds one of the circuit regions. Each inner seal ring has a substantially rectangular periphery with four interior corner stress relief (CSR) structures. The semiconductor structure further includes an outer seal ring surrounding the two inner seal rings. The outer seal ring has a substantially rectangular periphery without CSR structures at four interior corners of the outer seal ring. The outer seal ring includes a plurality of first fin structures located between each of the two inner seal rings and a respective short side of the outer seal ring. Each first fin structure is parallel with the respective short side of the outer seal ring. Lengths of the first fin structures gradually decrease along a direction from the inner seal rings to the respective short side of the outer seal ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.