Optical semiconductor chip
US12341315B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2020 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | May 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.