Semiconductor structure and manufacturing method thereof and memory
US12342529B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Aug 2, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6735
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes: a plurality of transistors located in a semiconductor layer; each of the transistors including a semiconductor body extending in a first direction and a gate structure covering at least one side surface of the semiconductor body; the first direction being a thickness direction of the semiconductor layer; a plurality of conductive pillars, each of the conductive pillars being located on a top surface of a corresponding semiconductor body and being in direct contact with the corresponding semiconductor body; a memory structure covering the plurality of conductive pillars.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.