Memory device and manufacturing method thereof
US12342548B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 10, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Oct 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
An ovonic threshold switch (OTS) selector and a memory device including the OTS selector is provided. The OTS selector includes a switching layer formed of a GeCTe compound further doped with one or both of nitrogen and silicon, and exhibits improved thermal stability and electrical performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.