Trench MOSFET

US12342569B2 · kind B2 · utility

Assignee

• Nexperia B.V. · NL

Inventors

• Steven Peake · Warrington, GB
• Phil Rutter · Stockport, GB

Key dates

• Filing date: May 18, 2022
• Grant date: Jun 24, 2025
• Expiry date: Jul 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

The present disclosure relates to a trench metal-oxide-semiconductor field-effect transistor, trench MOSFET, and to a method for manufacturing such transistors. In particular, the present disclosure relates to trench MOSFETs having deep trenches adjacent to the more shallow gate defining trench for obtaining a RESURF effect. According to the present disclosure, an ion implantation region of a charge type similar to that of the drift region is formed in the drift region. The ion implantation region extends below the deep trenches of the trench MOSFET and is vertically aligned with a base of the deep trenches.