Semiconductor devices
US12342576B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2022 |
| Grant date | Jun 24, 2025 |
| Priority date | — |
| Expiry date | Jan 3, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device is provided. The semiconductor device includes: a substrate with an active region extending in a first direction; an element isolation layer, adjacent to the active region, in the substrate; a gate electrode on the substrate and extending in a second direction which crosses the first direction; a plurality of channel layers on the active region, spaced apart from each other along a third direction perpendicular to an upper surface of the substrate, and surrounded by the gate electrode; and a source/drain region provided in a recess of the active region adjacent to the gate electrode, and connected to the plurality of channel layers. In the first direction, the gate electrode has a first length on the active region and a second length, greater than the first length, on the element isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.